RoHS1030−µF8.0MRF
2SK880-Y(TE85L,F)Photo for reference; actual part appearance may vary.

2SK880-Y(TE85L,F)

Manufacturer: Toshiba

Drain Current: 1.2mA@10V; Ciss-Input Capacitance: 13pF@10V; Pd - Power Dissipation: 100mW · SOT-323 · JFETs

DatasheetRoHS compliant
Stock quantity1,990
Lead time1-3 Days
Min. package qty (MPQ)5

Price breaks (USD)

QuantityUnit price
5+$0.2209
50+$0.1754
150+$0.1559
500+$0.1315
3,000+$0.1207
6,000+$0.1142
Total:

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Prices and stock are reference data — please contact us to confirm.

Specifications

Part number2SK880-Y(TE85L,F)
ManufacturerToshiba
CategoryDiscrete Semiconductors
Sub-categoryJFETs
PackageSOT-323
Drain Current1.2mA@10V
Ciss-Input Capacitance13pF@10V
Pd - Power Dissipation100mW
RoHSYes
Min. package qty (MPQ)5
Lead time1-3 Days
Stock quantity1,990
DatasheetDatasheet (PDF)

Description

2SK880-Y(TE85L,F) — JFETs from Toshiba. Package: SOT-323. Key parameters: Drain Current: 1.2mA@10V; Ciss-Input Capacitance: 13pF@10V; Pd - Power Dissipation: 100mW. Availability, price breaks and lead time are confirmed when you contact us.